MF067100 - SEMI MF671 - Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials Revision:SEMI MF671-0707 - Superseded 1 Ω∙cm～10000 Ω∙cmの範囲内である試料に用いる。

1 Ω∙cm～10000 Ω∙cmの範囲内である試料に用いる。

The purpose of the Guide is to avoid prolonged rinse-up of the new HPIX when it is loaded into ion exchange (polish) tanks

and available data

For this purpose

SEMI M61 — Specification for Silicon Epitaxial Wafers with Buried Layers

MF067100 - SEMI MF671 - Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials Revision:SEMI MF671-0707 - Superseded 1 Ω∙cm～10000 Ω∙cmの範囲内である試料に用いる。This Test Method covers techniques for determination of the length of the flatted portion of a wafer periphery. This Test Method is intended primarily for use on electronic materials in the form of nominally circular edge contoured wafers with flat lengths up to 65 mm. The precision of this Test Method has been established directly only for silicon wafers, but it is not expected to be material dependent. This Test Method is suitable for referee